Transcend Information Inc. (Transcend®), a global leader in the manufacture of high performance memory modules, is proud to unveil 4GB aXeRam™ DDR3-1800 memory upgrade kits. Designed specifically for hard-core gamers using only top-binned, premium quality DRAM chips and custom high-purity aluminum heat sinks with cooling fins, aXeRam DDR3-1800 dual-channel kits deliver amazing high-speed overclocking performance while maintaining cool temperatures and rock-solid system stability.Transcend’s 4GB aXeRam DDR3-1800 kit’s two identically-matched 240-pin unbuffered 2GB DDR3 1800MHz DIMMs are carefully paired for use in dual-channel configuration, which together provide memory bandwidth of up to 28.8GB/s. To ensure extra-stability and signal integrity at high clock speeds, all aXeRam modules use robust eight-layer PCBs that fully comply with JEDEC standards. The aXeRam 128Mx8 DDR3 DRAM chips are selected with the strictest quality and performance standards and are manufactured using small Fine-Pitch Ball Grid Array (FBGA) packages toassure better thermal dissipation, electrical efficiency and improved overclocking performance. Transcend’s aXeRam DDR3-1800 modules also support new Intel® Extreme Memory Profile (XMP) technology, which allows users with high-performance motherboards to easily overclock their memory with aXerRam’s built-in aggressive speed-maximized profiles, or manually input their own memory timing parameters to take their system to the next level.
Specification:
* Memory Type: DDR3 Overclocking Memory
* Pin and Module Type: 240Pin Long-DIMM
* Frequency: DDR3-1800+
* Function: Unbuffer Non-ECC 8-8-8-24
* Capacity: 4GB
* DRAM: 128Mx8
* Voltage: 1.8 V
* CL: 8
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has made a significant advancement in the push for higher volume memory chips by developing the world's first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 has become critical in reducing data center costs, improving server time management and increasing overall efficiency.
For the new generation of "green" servers, the 4Gb DDR3's high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
"We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities," said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc. "By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, weour 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market," he added.
The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB - offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.
Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V), therein improving its throughput by 20 percent over a 1.5V DDR3. Its maximum speed is 1.6 gigabits per second (Gbps).
In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs. 64 chips).
With an aggressive conversion to 50nm-class production for higher density DDR3, Samsung intends to remain the clear leader in high-volume/high-performance DRAM.
In September 2008, Samsung announced its development of the world's first 50 nm-class 2Gb DDR3 DRAM. Now, just five months after, it has established the industry's broadest line-up of high-performance DDR3 products using 50 nm-class process technology (4Gb, 2Gb, 1Gb).
As forecasts have the amount of memory per server doubling every two years, the development of high-density DRAM is expected to keep pace, expanding to other applications such as notebooks and desktop PCs.
According to the International Data Corporation (IDC), a market research and analysis firm, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).
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OCZ is said to be preparing for the launch of new triple-channe memory kits. The memory modules have not been announced yet, but word on the web says they are supposed to surface in the near future. The new kits will come as X58 loving Reaper parts and are said to be available as 3GB (3x1GB) and 6GB (3x2GB) kits, while working at 1866MHz.
According to the news on the Web, the fresh DDR3 Reaper Triple-channel kits will feature a slightly different design compared to the series, yet the change is rather insignificant, as there is still aheatsink connected to another smaller one via a heatpipe. The difference here would be that the new heatsink is made out of nickle-plated copper. The 1866MHz Reaper kits will feature 9-9-9-28 latencies and will work at 1.65Volts.
The same news also states that OCZ plans to launch a Platinum 6GB and 3GB triple-channel kits which are expected to feature the 1866MHz frequency, 9-9-9-28 latencies and 1.65Volts working voltage. The only problem would be that the Platinum kits will feature a smaller heatsink, generating higher operating temperatures and lower overclocking results than in the case of the Reaper series.
OCZ has made a name as a provider of high-performance reliable memory products, and the upcoming kits should fit just well in the company's commitment to provide the best solutions to its users. The X58 loving Reaper memory modules should be able to enhance the user experience of any owner of a Core i7 CPU and an X58 motherboard. As previously reported, the exact launch date has not been unveiled, yet the parts are expected to surface in the next few weeks. No information on the price of the kits has been disclosed either.
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A-DATA Technology Co., Ltd., a worldwide leading provider of high performance memory products, announced the launch of its A-DATA XPG DDR3-1800+ memory modules included in its Plus Series, which also comprises the company's DDR3-1600+ memory kits. The new DDR3-1800+ modules are available in dual channel kits, 1GBx2 and 2GBx2, as well as in triple channel retail packs as 2GBx3 and 1GBx3.The incredible 1800MHz speed of the memory kits is complemented by the CL8-8-8-24 timings, which are able to offer leveraged performance to high-end systems. Moreover, the high-frequency memory modules are designed to operate while balancing great speeds, low power consumption and low latencies without turning hot, courtesy of the innovative aluminum heatspreaders they sport.
The company announced that the 2GB/4GB dual channel module kits were tested at 1800MHz, the same as the 3GB/6GB triple channel ones. Moreover, the provider also specified that tests were made at latency settings 8-8-8-24 at 1.65V-1.85V. The specification list of the memory modules also includes SPD (Serial Presence Detect) programmed at JEDEC standard DDR3-1333 with latency settings at 9-9-9-24 for basic system booting.The feature list of the new A-DATA XPG DDR3-1800+ memory modules includes:
- all memory chips are verified using overclocking criteria for better quality;
- high quality 6 layers PCB (Printed Circuit Board);
- optimizations for 64-bit OS;
- backward compatibility with DDR3-1600, 1333 and 1066;
- lifetime limited warranty.
A-DATA has managed to build in time a reputation of a provider of consistently high quality. The DDR3-1800+ kits have passed burn-in testing and rigorous capability testing meant to ensure stable operation over extended periods of usage. The A-DATA Plus Series is meant to provide the performance, compatibility, and stability PC enthusiasts and gamers are seeking, and it is able to satisfy their needs in terms of high-performance modules.
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One of the concerns in the transition to Core i7-based platforms was how Intel's new chips would fare with DDR3 memory exceeding 1.65V. Early reports warned that the higher voltage kits might potentially pose a risk to the processor, prompting memory makers to focus on triple-channel kits with lower voltage than their dual-channel counterparts. But voltage restrictions could become even less of a concern now that Elpida has completed its development of a 50nm process DDR3 SDRAM.Elpida claims its new DRAM features the lowest power consumption in the industry, requiring as little as 1.2V, making them good candidates for eco-conscious server environments and data centers. The 2.5Gbps-capable chips can also operate at 1.5V and Elpida says initial applications will include high-end desktops.Mass production of the 50nm chips is scheduled to being in Q1 2009.
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Elpida Memory, a Japanese global supplier of Dynamic Random Access Memory (DRAM), announced today having managed to complete the development of a 50 nanometer process DDR3 SDRAM. According to the company, the new DRAM is characterized by a very low power consumption, but can reach 2.5Gbps ultra high speed and a 1.2V low voltage operation based on the industry's smallest chip size.The company has developed the 50nm process DDR3 SDRAM while using the 193nm (ArF) immersion lithography technology and copper interconnect technology. The size of the new chip is less than 40mm2. Moreover, the company says that the SDRAM can operate not only at the standard 1.5V supply voltage of the DDR3 modules, but also at even lower voltages of 1.35V and 1.2V. The product contributes to the low-power operations of high-density memory systems including servers and data centers.The new 50nm process DDR3 SDRAM can deliver data transfer rates of 800Mbps, 1066Mbps, 1333Mbps, 1600Mbps, 1866Mbps, 2133Mbps and 2500Mbps, while operating at 1.2V, 1.35V and 1.5V voltages. The product features low electric current which delivers a maximum 50 percent reduction (IDD4) compared to 70 nanometer process DRAM.
The company announced that the DDR3 SDRAM would initially be used in applications for high-end desktop PCs. The product will be used in other applications as well, considering the current shift away from DDR2 SDRAMs in notebook PCs and server equipment. Also, the company plans entering mass production with the new 50nm process DDR3 SDRAM at some point in the January-March 2009 time frame.
Elpida Memory, the leading manufacturer of DRAM integrated circuits, has a world class expertise in design, manufacturing and sales operations. It uses the most advanced manufacturing technologies available with its 300mm manufacturing facilities. More information on both Elpidia and its advancements in technology are available on the company's site.
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The era of quad-core mobile gaming draws closer as Asus gears up to release its G71 gaming notebook. Quad-core processors in notebooks are nothing new, but the G71 will use a true mobile quad-core CPU, specifically the Intel QX9300.The 17-inch notebook uses a GeForce 9700M GT videocard with 512MB of GDDR3 RAM to push gaming pixels on the display's 1920x1200 resolution. Users can configure up to 4GB of DDR3-1066 memory, and on the non-volatile storage front, up to two 500GB hard drives for a total of 1TB. In other words, it will be a long time before you have to decide between installing a new game or storing porn.Other features include a 2MP webcam, secondary keyboard display so you can keep an eye on your MSN Messenger IMs while gaming, optional Blu-ray drive, HDMI, eSATA, and everything else you'd expect to find on a modern high-end laptop.
Pricing and availability have not yet been announced, but did we mention it comes with a quad-core processor?
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HTC has launched its latest quad-band PDA phone HTC P4350 in the Indian market. At 17mm thick, it features a semi-automatic sliding QWERTY keypad.The P4350 features Windows Mobile 6.0 Direct push-email technology, internet browsing, and synchronization with Microsoft Outlook calendar, contacts, pocket MSN, and is powered by a 200MHz processor. It also provides the ability to work on Microsoft Office suite. Weighing 168 grams, the slim and compact device has a 2.8-inch colour display with a touch-screen and a landscape view screen for checking emails, surfing the internet, and watching videos. It also comes with a 5-way navigation control and packs 128MB ROM and 64MB RAM. For connectivity, the device supports GSM/GPRS and EDGE, Wi-Fi, and Bluetooth. Check its complete specifications here.
The HTC P4350 will be available at all authorized resellers at a market operating price of Rs. 21,900.
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Transcend Information has released its retail-packaged DDR3-1066 and DDR3-1333 240-pin DIMMs.
DDR3 is the successor to DDR2 memory, and will soon become the industry standard for PC memory modules. Compared to DDR2, it offers faster transfer speeds and better bandwidth with an 8-bit as opposed to 4-bit pre-fetch buffer, and is a perfect match for modern systems using dual or quad-core processors.Moreover, the operating voltage of DDR3 memory modules has been decreased from 1.8V to 1.5V, thus reducing actual memory power consumption by 20-30% compared to systems with DDR2 memory. Transcend's DDR3-1066 and DDR3-1333 DIMMs are currently available in 1 GB and 2 GB capacities respectively.
Austin Huang, Regional Head - Sales, SAARC and APAC, Transcend, said, "We are extremely delighted to introduce our DD3 Memory Modules, which will offer powerful yet energy efficient memory resulting in enhanced performance for Desktop PC users. Transcend's aXeRam memory
will deliver amazing overclocking performance while maintaining rock-solid system stability."
Transcend's DDR3-1066 and DDR3-1333 DIMMs are made of high-quality 128Mx8 DDR3 DRAM chips and use robust PCBs that meet JEDEC (the Joint Electron Device Engineering Council) standards. Each chip is selected with the strictest quality and performance standards and is manufactured using small Fine-Pitch Ball Grid Array (FBGA) packages with extra contacts to assure better thermal dissipation, electrical efficiency and reliable computing quality at high clock frequencies. In addition, DDR3 memory modules incorporate all-new "Fly-by" architecture that provides more efficient direct communication between the controller and each DRAM chip. This new architecture also includes dynamic On-DIMM Termination to minimize signal reflections at higher speeds.
This new pair is available at a cost of Rs. 6,500.
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Just over two months after introducing the first Chrome 400-series graphics card, S3 has added a new, faster variant to its lineup. From the outside, the new Chrome 440 GTX doesn't look very different from the Chrome 430 GT, with the same low-profile design and cooler. The two cards' GPUs are both 65nm, DirectX 10.1-capable parts with the ability to decode 1080p Blu-ray video.However, S3 has outfitted the Chrome 440 GTX with GDDR3 RAM, and it claims the new card offers higher overall performance than the DDR2-powered 430 GT. A chart on its website shows the newcomer yielding a 15% greater score than AMD's Radeon HD 3470 in 3DMark06 onWindows Vista. For reference, S3 claims its Chrome 430 GT outperforms the slower Radeon HD 3450 by 20% or so in the same benchmark.
S3 has opted to price the Chrome 440 GTX at only $69, making it just $10 pricier than the 430 GT. That's also about $10 more expensive than the Radeon HD 3470, a Sapphire-built version of which can be had for $59.99 on Newegg. The 3470 has passive cooling, although it doesn't have a low-profile circuit board design.
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