50nm Process DDR3 SDRAM from Elpida

By Koushik Saha on 26.11.08

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Elpida Memory, a Japanese global supplier of Dynamic Random Access Memory (DRAM), announced today having managed to complete the development of a 50 nanometer process DDR3 SDRAM. According to the company, the new DRAM is characterized by a very low power consumption, but can reach 2.5Gbps ultra high speed and a 1.2V low voltage operation based on the industry's smallest chip size.

The company has developed the 50nm process DDR3 SDRAM while using the 193nm (ArF) immersion lithography technology and copper interconnect technology. The size of the new chip is less than 40mm2. Moreover, the company says that the SDRAM can operate not only at the standard 1.5V supply voltage of the DDR3 modules, but also at even lower voltages of 1.35V and 1.2V. The product contributes to the low-power operations of high-density memory systems including servers and data centers.The new 50nm process DDR3 SDRAM can deliver data transfer rates of 800Mbps, 1066Mbps, 1333Mbps, 1600Mbps, 1866Mbps, 2133Mbps and 2500Mbps, while operating at 1.2V, 1.35V and 1.5V voltages. The product features low electric current which delivers a maximum 50 percent reduction (IDD4) compared to 70 nanometer process DRAM.

The company announced that the DDR3 SDRAM would initially be used in applications for high-end desktop PCs. The product will be used in other applications as well, considering the current shift away from DDR2 SDRAMs in notebook PCs and server equipment. Also, the company plans entering mass production with the new 50nm process DDR3 SDRAM at some point in the January-March 2009 time frame.

Elpida Memory, the leading manufacturer of DRAM integrated circuits, has a world class expertise in design, manufacturing and sales operations. It uses the most advanced manufacturing technologies available with its 300mm manufacturing facilities. More information on both Elpidia and its advancements in technology are available on the company's site.

1 comments for this post


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Posted on April 11, 2009 at 6:17 PM