SuperSpeed USB 3.0 will be showcased at CES

By Koushik Saha on 3.1.09

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Symwave, Inc., a semiconductor supplier of high-performance analog/mixed-signal connectivity solutions for the PC, consumer and mobile devices, has announced that it will demonstrate at CES, the world’s first consumer application of SuperSpeed USB 3.0, which is 10 times faster (maximum rate of 5 Gbps) than legacy USB technology. Symwave is collaborating with the leading test, cable, components and hard drive manufacturers to demonstrate the transfer speeds of USB 3.0 and will showcase streaming data to and from external storage devices at speeds previously unattainable.
SuperSpeed USB 3.0 is backwards compatible with the more than 10 billion USB devices shipped to date. According to the reports, USB 3.0 devices could becomeavailable in commercial controllers in the second half of 2009 but consumer products using the new spec are not expected till 2010.


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First 2Gb mobile DRAM from Hynix

By Koushik Saha on 4.12.08

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Hynix Semiconductor announced it has developed the world's first 2Gigabit mobile DRAM using 54nm process technology.

This product provides twice as much storage capacity over current 1Gb mobile solution which has been the highest density offered among the mobile DRAM products in MCP (Multi Chip Package), PoP(Package on Package) platform. It boasts maximum operating speed of 400Mbps (Megabits per second) at 1.2V power supply and processes up to 1.6 Gigabytes of dataper second with a 32-bit I/O. Moreover, the new product consumes less power than existing memory solutions.

Besides its various features, the new product also has function of Hynix's One Chip Solutions. It offers flexible options for both SDRAM and DDR DRAM interfaces, and both x16 and x32 organizations on a single chip.

The product which meets JEDEC standard is suited for the next generation applications of MID (Mobile Internet Device) and UMPC (Ultra Mobile PC) as well as higher density required products.

Hynix plans to start mass production in the first half of next year.


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