Hynix Semiconductor announced it has developed the world's first 2Gigabit mobile DRAM using 54nm process technology.

This product provides twice as much storage capacity over current 1Gb mobile solution which has been the highest density offered among the mobile DRAM products in MCP (Multi Chip Package), PoP(Package on Package) platform. It boasts maximum operating speed of 400Mbps (Megabits per second) at 1.2V power supply and processes up to 1.6 Gigabytes of dataper second with a 32-bit I/O. Moreover, the new product consumes less power than existing memory solutions.

Besides its various features, the new product also has function of Hynix's One Chip Solutions. It offers flexible options for both SDRAM and DDR DRAM interfaces, and both x16 and x32 organizations on a single chip.

The product which meets JEDEC standard is suited for the next generation applications of MID (Mobile Internet Device) and UMPC (Ultra Mobile PC) as well as higher density required products.

Hynix plans to start mass production in the first half of next year.

Hynix this week double-dipped into the record books by introducing the world's first and fastest 1 Gigabit GDDR5 graphics DRAM operating at 7Gb/s, a 40 percent improvement over 5Gb/s GDDR5. The new memory is built using a 54nm process and can process up to 28GB/s with a 32-bit I/O, the company claims. On a 512-bit memory bus, bandwidth should reach as high as 448GB/s.

In addition to speed, Hynix also emphasized power consumption. The new memory requires just 1.35V as opposed to 1.5V inherent in previous generation GDDR5 memory. This means that the improved GDDR5 not only bodes well for future high performance videocards, but the potential for lower heat and longer battery life could also be a boon for notebooks.Hynix says its 1Gb GDDR5 graphics memory meets the JEDEC standard and plans to start volume production in the first half of 2009.